IPB027N10N3GATMA1 vs IPD046N08N5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB027N10N3GATMA1 disebabkan oleh Infineon dan IPD046N08N5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB027N10N3GATMA1 IPD046N08N5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 3 (Trench MOSFET) OptiMOS™ 5 trench MOSFET
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25°C 120 A —
Power Dissipation (PD) at TC=25°C 300 W —
On-Resistance RDS(on) max at VGS=10V 3.4 mΩ —
On-Resistance RDS(on) typical at VGS=10V 2.7 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and min/max VGS(th) values] —
Gambaran Suhu Operasi -55°C to +175°C (TJ) —
Kemasan PG-TO263-3 (D2PAK) —
Jenis Pemasangan Surface Mount Surface Mount
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: exact °C/W value] —
Single Pulse Avalanche Energy (EAS) [DATA_NEEDED: datasheet EAS figure] —
Status RoHS Compliant ROHS3 Compliant
Aras MSL [DATA_NEEDED: moisture sensitivity level] 1 (per JEDEC J-STD-020)
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg at VGS=10V] —
Manufacturer — Infineon Technologies
Product Series — OptiMOS™ 5 80V
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) Max — 80 V
Continuous Drain Current (ID) at Tc=25°C — 90 A
On-Resistance RDS(on) Max at VGS=10V — 4.6 mΩ
Gate-Source Voltage (VGS) Max — ±20 V
Power Dissipation (PD) at Tc=25°C — 125 W
Gambaran Suhu Hubungan Operasi — -55 °C to +175 °C
Kemasan / Case — PG-TO252-3 (DPAK), 3-pin (2 leads + tab)
Configuration — Single N-channel, 3-pin (Gate / Drain tab / Source)

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