IPB031N08N5ATMA1 vs IPD046N08N5ATMA1 Perbandingan
Perbandingan bersamaan detil IPB031N08N5ATMA1 dari Infineon dan IPD046N08N5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPB031N08N5ATMA1 | IPD046N08N5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS™ 5 trench MOSFET |
| Drain-Source Voltage (VDS) Max | 80 V | 80 V |
| Continuous Drain Current (ID) | 120 A (Tc) | — |
| Power Dissipation (PD) Max | 167 W (Tc) | — |
| On-Resistance (RDS(on)) Max | 3.1 mOhm (VGS=10V) | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | ±20 V |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Rentang Suhu Kerja | -55 C to +175 C | — |
| Paket | PG-TO263-3 (D2PAK) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (Gate, Drain, Source + Tab) | — |
| Tab Connection | Drain (electrically connected to pin) | — |
| Status RoHS | Compliant | ROHS3 Compliant |
| Level MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Automotive Qualified | Yes (per Arrow listing) | — |
| Manufacturer | — | Infineon Technologies |
| Product Series | — | OptiMOS™ 5 80V |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25°C | — | 90 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 4.6 mΩ |
| Power Dissipation (PD) at Tc=25°C | — | 125 W |
| Rentang Suhu Hubung Kerja | — | -55 °C to +175 °C |
| Paket / Case | — | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) |
| Configuration | — | Single N-channel, 3-pin (Gate / Drain tab / Source) |