IPB038N12N3GATMA1 vs IPB017N10N5LFATMA1 Perbandingan
Perbandingan bersamaan detil IPB038N12N3GATMA1 dari Infineon dan IPB017N10N5LFATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPB038N12N3GATMA1 | IPB017N10N5LFATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 120V | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vdss) | 120 V | — |
| Continuous Drain Current (Id) @ Tc | 120 A | — |
| Power Dissipation (Pd) @ Tc | 300 W | — |
| On-State Resistance (Rds(on)) | 3.8 mOhm (typical) | — |
| Paket / Case | PG-TO263-3 (D2PAK) | PG-TO263-7 (D2PAK-7), surface mount |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | MOSFET (Metal Oxide Semiconductor) |
| Gate Drive | Logic-level compatible | — |
| Rentang Suhu Kerja | -55C to +175C (junction) | -55C to +175C (junction) |
| Standard Package Quantity | 1000 (Tape & Reel) | — |
| Status RoHS | Compliant | Compliant |
| Avalanche Rated | Yes | Yes |
| Series | — | OptiMOS 5 Linear FET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) @ TC=25C | — | 180 A |
| Continuous Drain Current (ID) @ TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Maximum Power Dissipation (PD) @ TC=25C | — | 313 W |
| Drain-Source On-Resistance (RDS(on)) @ VGS=10V | — | 1.7 mΩ (max) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Level MSL | — | 1 (unlimited) |
| Linear-Mode (SOA) Optimized | — | Yes (OptiMOS Linear FET) |