IPB038N12N3GATMA1 vs IPB017N10N5LFATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB038N12N3GATMA1 disebabkan oleh Infineon dan IPB017N10N5LFATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPB038N12N3GATMA1 | IPB017N10N5LFATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 120V | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vdss) | 120 V | — |
| Continuous Drain Current (Id) @ Tc | 120 A | — |
| Power Dissipation (Pd) @ Tc | 300 W | — |
| On-State Resistance (Rds(on)) | 3.8 mOhm (typical) | — |
| Kemasan / Case | PG-TO263-3 (D2PAK) | PG-TO263-7 (D2PAK-7), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | MOSFET (Metal Oxide Semiconductor) |
| Gate Drive | Logic-level compatible | — |
| Gambaran Suhu Operasi | -55C to +175C (junction) | -55C to +175C (junction) |
| Standard Package Quantity | 1000 (Tape & Reel) | — |
| Status RoHS | Compliant | Compliant |
| Avalanche Rated | Yes | Yes |
| Series | — | OptiMOS 5 Linear FET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) @ TC=25C | — | 180 A |
| Continuous Drain Current (ID) @ TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Maximum Power Dissipation (PD) @ TC=25C | — | 313 W |
| Drain-Source On-Resistance (RDS(on)) @ VGS=10V | — | 1.7 mΩ (max) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Aras MSL | — | 1 (unlimited) |
| Linear-Mode (SOA) Optimized | — | Yes (OptiMOS Linear FET) |