IPB038N12N3GATMA1 vs IPB017N10N5LFATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB038N12N3GATMA1 sa pamamagitan ng Infineon at IPB017N10N5LFATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB038N12N3GATMA1 - 120V 120A 3.8mOhm N-Ch OptiMOS | Infineon
IPB038N12N3GATMA1 ✓ NakahandaInfineon
IPB017N10N5LFATMA1 - 100V 1.7mΩ OptiMOS 5 Linear FET | Infineon
IPB017N10N5LFATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPB038N12N3GATMA1 | IPB017N10N5LFATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 120V | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vdss) | 120 V | — |
| Continuous Drain Current (Id) @ Tc | 120 A | — |
| Power Dissipation (Pd) @ Tc | 300 W | — |
| On-State Resistance (Rds(on)) | 3.8 mOhm (typical) | — |
| Packhaging / Kaso | PG-TO263-3 (D2PAK) | PG-TO263-7 (D2PAK-7), surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | MOSFET (Metal Oxide Semiconductor) |
| Gate Drive | Logic-level compatible | — |
| Hanay ng Temperature na Operasyon | -55C to +175C (junction) | -55C to +175C (junction) |
| Standard Package Quantity | 1000 (Tape & Reel) | — |
| Tindminan RoHS | Compliant | Compliant |
| Avalanche Rated | Yes | Yes |
| Series | — | OptiMOS 5 Linear FET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) @ TC=25C | — | 180 A |
| Continuous Drain Current (ID) @ TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Maximum Power Dissipation (PD) @ TC=25C | — | 313 W |
| Drain-Source On-Resistance (RDS(on)) @ VGS=10V | — | 1.7 mΩ (max) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Level ng MSL | — | 1 (unlimited) |
| Linear-Mode (SOA) Optimized | — | Yes (OptiMOS Linear FET) |