IPB081N06L3GATMA1 vs IPD50N06S409ATMA2 Perbandingan

Perbandingan bersamaan detil IPB081N06L3GATMA1 dari Infineon dan IPD50N06S409ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB081N06L3GATMA1 IPD50N06S409ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 3 —
Tipe Transistor N-Channel MOSFET —
Paket PG-TO263-3 (D2PAK) PG-TO252-3-11 (DPAK)
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Tc=25C 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current rating] —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 1.2 V min, 2.1 V typ, 2.6 V max [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) at VGS=10V 8.1 mOhm typical —
Maximum Power Dissipation (Pd) at Tc=25C 79 W —
Rentang Suhu Kerja -55 C to +175 C (junction) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 —
Pin Configuration Gate / Drain / Source (D2PAK standard) —
Technology OptiMOS 3 (low-voltage power MOSFET) N-Channel MOSFET (OptiMOS)
Status RoHS Compliant Compliant
Level MSL 1 (unlimited) —
Continuous Drain Current (ID) at Tc — 50 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V — 9 mΩ
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc — 71 W
Suhu Hubung Kerja — -55 °C to +175 °C
Jumlah Pin — 3 (2 + Tab)
Automotive Qualification — AEC-Q101
Lead-Free / Halogen-Free — [DATA_NEEDED]

Spek dan Sumber

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