IPB081N06L3GATMA1 vs IPD50N06S409ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB081N06L3GATMA1 disebabkan oleh Infineon dan IPD50N06S409ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB081N06L3GATMA1 IPD50N06S409ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 3 —
Jenis Transistor N-Channel MOSFET —
Kemasan PG-TO263-3 (D2PAK) PG-TO252-3-11 (DPAK)
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Tc=25C 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current rating] —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 1.2 V min, 2.1 V typ, 2.6 V max [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) at VGS=10V 8.1 mOhm typical —
Maximum Power Dissipation (Pd) at Tc=25C 79 W —
Gambaran Suhu Operasi -55 C to +175 C (junction) —
Jenis Pemasangan Surface Mount Surface Mount
Bilangan Pin 3 —
Pin Configuration Gate / Drain / Source (D2PAK standard) —
Technology OptiMOS 3 (low-voltage power MOSFET) N-Channel MOSFET (OptiMOS)
Status RoHS Compliant Compliant
Aras MSL 1 (unlimited) —
Continuous Drain Current (ID) at Tc — 50 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V — 9 mΩ
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc — 71 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Kiraan Pin — 3 (2 + Tab)
Automotive Qualification — AEC-Q101
Lead-Free / Halogen-Free — [DATA_NEEDED]

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