IPB120P04P4L03ATMA2 vs IPD50P04P4L11ATMA2 Perbandingan
Perbandingan bersamaan detil IPB120P04P4L03ATMA2 dari Infineon dan IPD50P04P4L11ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IPB120P04P4L03ATMA2 | IPD50P04P4L11ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Transistor Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25C) | 120 A | — |
| Power Dissipation (PD, Tc=25C) | 136 W | — |
| On-Resistance (RDS(on)) | 3.1 mΩ (typ, per Infineon summary) | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | — |
| Suhu Hubung Kerja | -55C to +175C | -55 °C to +175 °C |
| Paket | PG-TO263-3-2 (D2PAK) | PG-TO252-3-313 (DPAK), surface mount |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology Family | OptiMOS-P2 | — |
| Configuration | Single P-Channel MOSFET | — |
| Jumlah Pin | 3 (Gate, Drain, Source) | 3 (Drain / Tab / Source / Gate) |
| Level MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant (per Infineon product page) | — |
| Tipe Transistor | — | P-Channel MOSFET, enhancement mode |
| Drain-Source Voltage VDS | — | -40 V |
| Continuous Drain Current ID (TC = 25 °C) | — | -50 A |
| On-State Resistance RDS(on) (VGS = -10 V) | — | 10.6 mΩ typical |
| Gate-Source Voltage VGS (max) | — | ±20 V |
| Gate Threshold Voltage VGS(th) | — | -1.0 V to -2.5 V typical |
| Typical Gate Charge Qg | — | 45 nC |
| Power Dissipation PD (TC = 25 °C) | — | 58 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | Compliant |