IPB120P04P4L03ATMA2 vs IPD50P04P4L11ATMA2 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPB120P04P4L03ATMA2 sa pamamagitan ng Infineon at IPD50P04P4L11ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPB120P04P4L03ATMA2 IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon

IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon

IPB120P04P4L03ATMA2 ✓ Nakahanda
Infineon
IPD50P04P4L11ATMA2 IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon

IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon

IPD50P04P4L11ATMA2 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPB120P04P4L03ATMA2 IPD50P04P4L11ATMA2
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Transistor Polarity P-Channel —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc=25C) 120 A —
Power Dissipation (PD, Tc=25C) 136 W —
On-Resistance (RDS(on)) 3.1 mΩ (typ, per Infineon summary) —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] —
Temperature ng Junction na Operasyon -55C to +175C -55 °C to +175 °C
Packhaging PG-TO263-3-2 (D2PAK) PG-TO252-3-313 (DPAK), surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Technology Family OptiMOS-P2 —
Configuration Single P-Channel MOSFET —
Bilang ng Pin 3 (Gate, Drain, Source) 3 (Drain / Tab / Source / Gate)
Level ng MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Tindminan RoHS Compliant (per Infineon product page) —
Uri ng Transistor — P-Channel MOSFET, enhancement mode
Drain-Source Voltage VDS — -40 V
Continuous Drain Current ID (TC = 25 °C) — -50 A
On-State Resistance RDS(on) (VGS = -10 V) — 10.6 mΩ typical
Gate-Source Voltage VGS (max) — ±20 V
Gate Threshold Voltage VGS(th) — -1.0 V to -2.5 V typical
Typical Gate Charge Qg — 45 nC
Power Dissipation PD (TC = 25 °C) — 58 W
Automotive Qualification — AEC-Q101 qualified
RoHS Compliance — Compliant

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