IPB180P04P4L02ATMA2 vs IPD30N08S2L21ATMA1 Perbandingan
Perbandingan bersamaan detil IPB180P04P4L02ATMA2 dari Infineon dan IPD30N08S2L21ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPB180P04P4L02ATMA2 - 40V P-Channel 180A OptiMOS-P2 MOSFET | Infineon
IPB180P04P4L02ATMA2 ✓ AktifInfineon
IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon
IPD30N08S2L21ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPB180P04P4L02ATMA2 | IPD30N08S2L21ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-P2 | OptiMOS |
| Tipe Transistor | P-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 75 V |
| Continuous Drain Current (ID) at Tc | 180 A | — |
| Power Dissipation (PD) at Tc | 150 W | — |
| On-State Resistance RDS(on) max | 2.4 mOhm at VGS = -10 V (per Infineon product page) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Rentang Suhu Kerja | -55 C to +175 C (junction) | -55C to +175C |
| Paket | PG-TO263-7-3 (D2PAK-6, 7-pin) | PG-TO252-3-11 (DPAK-2) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 7 (6 + tab) | 3 (Drain tab + Gate + Source) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Level MSL | [DATA_NEEDED: MSL rating] | 1 |
| Status RoHS | Compliant (per Infineon product page) | Compliant |
| Tab Connection | Drain | — |
| Continuous Drain Current (ID) at Tc=25C | — | 30 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance (RDS(on)) at VGS=10 V | — | 26 milliohm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level (L series) |
| Gate Charge (Qg) typ | — | 56 nC |
| Power Dissipation (PD) at Tc=25C | — | 136 W |
| Maximum Junction Temperature | — | +175C |