IPB180P04P4L02ATMA2 vs IPD30N08S2L21ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB180P04P4L02ATMA2 sa pamamagitan ng Infineon at IPD30N08S2L21ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB180P04P4L02ATMA2 - 40V P-Channel 180A OptiMOS-P2 MOSFET | Infineon
IPB180P04P4L02ATMA2 ✓ NakahandaInfineon
IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon
IPD30N08S2L21ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPB180P04P4L02ATMA2 | IPD30N08S2L21ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-P2 | OptiMOS |
| Uri ng Transistor | P-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 75 V |
| Continuous Drain Current (ID) at Tc | 180 A | — |
| Power Dissipation (PD) at Tc | 150 W | — |
| On-State Resistance RDS(on) max | 2.4 mOhm at VGS = -10 V (per Infineon product page) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (junction) | -55C to +175C |
| Packhaging | PG-TO263-7-3 (D2PAK-6, 7-pin) | PG-TO252-3-11 (DPAK-2) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 7 (6 + tab) | 3 (Drain tab + Gate + Source) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Level ng MSL | [DATA_NEEDED: MSL rating] | 1 |
| Tindminan RoHS | Compliant (per Infineon product page) | Compliant |
| Tab Connection | Drain | — |
| Continuous Drain Current (ID) at Tc=25C | — | 30 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance (RDS(on)) at VGS=10 V | — | 26 milliohm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level (L series) |
| Gate Charge (Qg) typ | — | 56 nC |
| Power Dissipation (PD) at Tc=25C | — | 136 W |
| Maximum Junction Temperature | — | +175C |