IPB35N10S3L26ATMA1 vs IPD5N25S3430ATMA1 Perbandingan

Perbandingan bersamaan detil IPB35N10S3L26ATMA1 dari Infineon dan IPD5N25S3430ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB35N10S3L26ATMA1 IPD5N25S3430ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS-T —
Channel Type N-Channel —
Maximum Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC 35 A —
Power Dissipation (PD) at TC 71 W —
Package Type PG-TO263-3 (D2PAK-2) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Gate, Drain, Source) —
Channel Mode Enhancement —
RDS(on) (typical per Infineon product page) 26.3 mΩ —
Typical Gate Charge Qg @ Vgs 80 nC —
Maximum Drain-Source Resistance Rds 1.7 mΩ (per RS Components listing) —
Minimum Operating Temperature -55 C —
Maximum Power Dissipation Pd 81 W (per RS Components listing) —
Status RoHS [DATA_NEEDED: RoHS status] ROHS3 Compliant
AEC-Q101 Qualification [DATA_NEEDED: AEC-Q101 qualification status] —
Tipe Transistor — N-Channel MOSFET
Technology — OptiMOS (planar-trench)
Drain-Source Voltage (VDS) — 250 V
Continuous Drain Current (ID, Tc=25°C) — 5 A
Pulsed Drain Current (IDM) — 20 A
RDS(on) max @ VGS=10V — 430 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 3 V typ / 4 V max
Input Capacitance (Ciss) — 422 pF typical
Power Dissipation (PD, Tc=25°C) — 41 W
Suhu Hubung Kerja — -55 °C to +175 °C
Paket — PG-TO252-3-313 (DPAK, surface mount)
Automotive Qualification — AEC-Q101
Lead Finish — Matte Tin (lead-free)
Level MSL — 1 (per JEDEC J-STD-020)
Configuration — Single, 3-pin (2+Tab)

Spek dan Sumber

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