IPB60R040CFD7ATMA1 vs IPL65R115CFD7AUMA1 Perbandingan

Perbandingan bersamaan detil IPB60R040CFD7ATMA1 dari Infineon dan IPL65R115CFD7AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPL65R115CFD7AUMA1 IPL65R115CFD7AUMA1 - 650V 24A 115mΩ CoolMOS CFD7 | Infineon

IPL65R115CFD7AUMA1 - 650V 24A 115mΩ CoolMOS CFD7 | Infineon

IPL65R115CFD7AUMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPB60R040CFD7ATMA1 IPL65R115CFD7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Status Stok In Stock —
Harga Unit (USD) $5,19 —
Manufacturer Infineon Technologies —
Product Family CoolMOS CFD7 —
Technology Superjunction (SJ) N-Channel MOSFET CoolMOS CFD7 (Superjunction)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 40 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
Dissipasi Listrik (TC=25°C) 227 W —
Rentang Suhu Kerja -55°C to +150°C -55 °C to +150 °C (TJ)
Paket PG-TO263-3-2 (D2PAK) PG-VSON-4 (VSON-4 EP)
Tipe Mounting Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode —
Level MSL 1 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 650 V
Continuous Drain Current (ID, Tc) — 24 A
Power Dissipation (PD, Tc) — 144 W
On-State Resistance (RDS(on)) — 115 mΩ at VGS=10V, ID=9.7A
Gate-Source Voltage (VGS) — ±20 V (max)
Gate-Source Threshold (VGS(th)) — 3.5 V (typ)
Body Diode — Integrated Fast Recovery

Spek dan Sumber

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