IPB60R040CFD7ATMA1 vs IPL65R115CFD7AUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB60R040CFD7ATMA1 sa pamamagitan ng Infineon at IPL65R115CFD7AUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPB60R040CFD7ATMA1 | IPL65R115CFD7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | In Stock | — |
| Presyo ng Yunit (USD) | $5.19 | — |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS CFD7 | — |
| Technology | Superjunction (SJ) N-Channel MOSFET | CoolMOS CFD7 (Superjunction) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 40 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 4 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Pwersang Pinahihigpit (TC=25°C) | 227 W | — |
| Hanay ng Temperature na Operasyon | -55°C to +150°C | -55 °C to +150 °C (TJ) |
| Packhaging | PG-TO263-3-2 (D2PAK) | PG-VSON-4 (VSON-4 EP) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Integrated Body Diode | Yes - ultra-fast CoolMOS CFD7 diode | — |
| Level ng MSL | 1 | 1 (per JEDEC J-STD-020) |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Target Applications | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID, Tc) | — | 24 A |
| Power Dissipation (PD, Tc) | — | 144 W |
| On-State Resistance (RDS(on)) | — | 115 mΩ at VGS=10V, ID=9.7A |
| Gate-Source Voltage (VGS) | — | ±20 V (max) |
| Gate-Source Threshold (VGS(th)) | — | 3.5 V (typ) |
| Body Diode | — | Integrated Fast Recovery |