IPD068N10N3GATMA1 vs IPB024N10N5ATMA1 Perbandingan

Perbandingan bersamaan detil IPD068N10N3GATMA1 dari Infineon dan IPB024N10N5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD068N10N3GATMA1 IPB024N10N5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPD068N10N3GATMA1 —
Technology OptiMOS 3 (N-Channel, Enhancement Mode) OptiMOS 5 N-Channel MOSFET (trench, shielded gate)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc 90 A —
On-Resistance RDS(on) max 6.8 mOhm —
Power Dissipation (PD) at Tc 150 W —
Gate Threshold Voltage VGS(th) 2.0 V to 4.0 V (typical) —
Paket PG-TO252-3 (DPAK, 2 leads + tab) PG-TO263-7 (D2PAK-7)
Tipe Mounting Surface Mount Surface Mount
Suhu Hubung Kerja -55 C to +175 C —
Channel Type N-Channel —
Configuration Single —
Status RoHS Compliant Compliant
Level MSL 1 1 (unlimited floor life at <30C/85% RH)
Packing Tape & Reel (T/R) —
Qualification Industrial (non-automotive) —
Continuous Drain Current (ID, TC=25C) — 180 A
Power Dissipation (PD, TC=25C) — 250 W
On-Resistance RDS(on) max @ VGS=10V — 2.4 mΩ
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) value]
Gate Charge Qg typ @ VGS=10V — [DATA_NEEDED: Qg total gate charge]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total gate charge]
Input Capacitance Ciss — [DATA_NEEDED: Ciss value]
Output Capacitance Coss — [DATA_NEEDED: Coss value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr value]
Rentang Suhu Kerja — -55C to +175C (junction)
Packaging — Tape & Reel (13-inch reel)
Bebas Halogen — Yes (per Infineon product family policy)

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