IPD33CN10NGATMA1 vs IPD30N10S3L34ATMA1 Perbandingan

Perbandingan bersamaan detil IPD33CN10NGATMA1 dari Infineon dan IPD30N10S3L34ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD33CN10NGATMA1 IPD30N10S3L34ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 27 A —
Power Dissipation (PD, Tc) 58 W —
Technology OptiMOS (Trench) —
Paket PG-TO252-3 (DPAK), Surface Mount PG-TO252-3-11 (DPAK-2 / SC-63)
Jumlah Pin 3 (Gate, Drain, Source) —
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +175C (TJ) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] —
Status RoHS Compliant —
Lead-Free Yes —
Level MSL 1 1 (JEDEC J-STD-020, 260°C peak reflow)
Manufacturer — Infineon Technologies
Product Family — OptiMOS-T2
Tipe Transistor — N-Channel Enhancement Mode MOSFET
Continuous Drain Current (ID, Tc=25°C) — 30 A
Pulsed Drain Current (IDM) — 180 A
Power Dissipation (PD, Tc=25°C) — 57 W
Drain-Source On-Resistance (RDS(on) max) — 31 mΩ @ VGS=10 V
Gate-Source Threshold Voltage (VGS(th) typ) — 1.7 V (range 1.0 V to 2.5 V)
Total Gate Charge (Qg typ) — 23 nC
Suhu Hubung Kerja — -55°C to +175°C
Automotive Qualification — AEC-Q101 qualified
RoHS / REACH — Compliant
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — 100% Avalanche tested

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