IPD33CN10NGATMA1 vs IPD30N10S3L34ATMA1 比較
詳細並排比較 IPD33CN10NGATMA1 由 Infineon 與 IPD30N10S3L34ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD33CN10NGATMA1 | IPD30N10S3L34ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 27 A | — |
| Power Dissipation (PD, Tc) | 58 W | — |
| Technology | OptiMOS (Trench) | — |
| 封裝 | PG-TO252-3 (DPAK), Surface Mount | PG-TO252-3-11 (DPAK-2 / SC-63) |
| 腳位數 | 3 (Gate, Drain, Source) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +175C (TJ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | — |
| RoHS 狀態 | Compliant | — |
| Lead-Free | Yes | — |
| MSL 等級 | 1 | 1 (JEDEC J-STD-020, 260°C peak reflow) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-T2 |
| 電晶體類型 | — | N-Channel Enhancement Mode MOSFET |
| Continuous Drain Current (ID, Tc=25°C) | — | 30 A |
| Pulsed Drain Current (IDM) | — | 180 A |
| Power Dissipation (PD, Tc=25°C) | — | 57 W |
| Drain-Source On-Resistance (RDS(on) max) | — | 31 mΩ @ VGS=10 V |
| Gate-Source Threshold Voltage (VGS(th) typ) | — | 1.7 V (range 1.0 V to 2.5 V) |
| Total Gate Charge (Qg typ) | — | 23 nC |
| 工作接面溫度 | — | -55°C to +175°C |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS / REACH | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | 100% Avalanche tested |