IPD33CN10NGATMA1 vs IPD30N10S3L34ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD33CN10NGATMA1 disebabkan oleh Infineon dan IPD30N10S3L34ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD33CN10NGATMA1 IPD30N10S3L34ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 27 A —
Power Dissipation (PD, Tc) 58 W —
Technology OptiMOS (Trench) —
Kemasan PG-TO252-3 (DPAK), Surface Mount PG-TO252-3-11 (DPAK-2 / SC-63)
Kiraan Pin 3 (Gate, Drain, Source) —
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +175C (TJ) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] —
Status RoHS Compliant —
Lead-Free Yes —
Aras MSL 1 1 (JEDEC J-STD-020, 260°C peak reflow)
Manufacturer — Infineon Technologies
Product Family — OptiMOS-T2
Jenis Transistor — N-Channel Enhancement Mode MOSFET
Continuous Drain Current (ID, Tc=25°C) — 30 A
Pulsed Drain Current (IDM) — 180 A
Power Dissipation (PD, Tc=25°C) — 57 W
Drain-Source On-Resistance (RDS(on) max) — 31 mΩ @ VGS=10 V
Gate-Source Threshold Voltage (VGS(th) typ) — 1.7 V (range 1.0 V to 2.5 V)
Total Gate Charge (Qg typ) — 23 nC
Suhu Hubungan Operasi — -55°C to +175°C
Automotive Qualification — AEC-Q101 qualified
RoHS / REACH — Compliant
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — 100% Avalanche tested

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga