IPD380P06NMATMA1 vs IRFR5305TRPBF Perbandingan
Perbandingan bersamaan detil IPD380P06NMATMA1 dari Infineon dan IRFR5305TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD380P06NMATMA1 | IRFR5305TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage V(BR)DSS | 60 V | — |
| Arus Alir Berlanjut (TC=25°C) | 35 A | — |
| Power Dissipation (Tc) | 125 W | — |
| Technology | OptiMOS P-channel trench | HEXFET (IR MOSFET) |
| Paket | PG-TO252-3 (DPAK), surface mount | TO-252AA (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 C to +150 C (junction) | -55 C to +175 C |
| Gate Drive | Logic-level compatible | — |
| Avalanche Rated | Yes (per manufacturer datasheet) | — |
| Status RoHS | Compliant | Compliant (Pb-free PBF suffix) |
| Level MSL | 1 | 1 |
| Target Applications | Reverse-polarity protection, load switch, BMS, high-side switch | — |
| Lead-Free | Yes | — |
| Automotive Qualified | Not specified in provided data [DATA_NEEDED: AEC-Q100 grade] | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) Max | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | 31 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance (RDS(on)) Max at VGS=-10V | — | 65 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | -2 V to -4 V |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25C | — | 110 W |
| Single-Pulse Avalanche Energy (EAS) | — | 270 mJ |
| Lead-Free Finish | — | Yes (PBF suffix) |