IPD380P06NMATMA1 vs IRFR5305TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD380P06NMATMA1 sa pamamagitan ng Infineon at IRFR5305TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IPD380P06NMATMA1 | IRFR5305TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage V(BR)DSS | 60 V | — |
| Patuloy na Drain Current (TC=25°C) | 35 A | — |
| Power Dissipation (Tc) | 125 W | — |
| Technology | OptiMOS P-channel trench | HEXFET (IR MOSFET) |
| Packhaging | PG-TO252-3 (DPAK), surface mount | TO-252AA (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55 C to +150 C (junction) | -55 C to +175 C |
| Gate Drive | Logic-level compatible | — |
| Avalanche Rated | Yes (per manufacturer datasheet) | — |
| Tindminan RoHS | Compliant | Compliant (Pb-free PBF suffix) |
| Level ng MSL | 1 | 1 |
| Target Applications | Reverse-polarity protection, load switch, BMS, high-side switch | — |
| Lead-Free | Yes | — |
| Automotive Qualified | Not specified in provided data [DATA_NEEDED: AEC-Q100 grade] | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) Max | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | 31 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance (RDS(on)) Max at VGS=-10V | — | 65 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | -2 V to -4 V |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25C | — | 110 W |
| Single-Pulse Avalanche Energy (EAS) | — | 270 mJ |
| Lead-Free Finish | — | Yes (PBF suffix) |