IPD380P06NMATMA1 vs IRFR5305TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD380P06NMATMA1 disebabkan oleh Infineon dan IRFR5305TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD380P06NMATMA1 IPD380P06NMATMA1 - 60V P-Ch MOSFET 35A OptiMOS | Infineon

IPD380P06NMATMA1 - 60V P-Ch MOSFET 35A OptiMOS | Infineon

IPD380P06NMATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD380P06NMATMA1 IRFR5305TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Channel Type P-Channel —
Drain-Source Voltage V(BR)DSS 60 V —
Arus Kumpal Tetap (TC=25°C) 35 A —
Power Dissipation (Tc) 125 W —
Technology OptiMOS P-channel trench HEXFET (IR MOSFET)
Kemasan PG-TO252-3 (DPAK), surface mount TO-252AA (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +150 C (junction) -55 C to +175 C
Gate Drive Logic-level compatible —
Avalanche Rated Yes (per manufacturer datasheet) —
Status RoHS Compliant Compliant (Pb-free PBF suffix)
Aras MSL 1 1
Target Applications Reverse-polarity protection, load switch, BMS, high-side switch —
Lead-Free Yes —
Automotive Qualified Not specified in provided data [DATA_NEEDED: AEC-Q100 grade] —
Polarity — P-Channel
Drain-Source Voltage (VDS) Max — -55 V
Continuous Drain Current (ID) at TC=25C — 31 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
On-Resistance (RDS(on)) Max at VGS=-10V — 65 mOhm
Gate-Source Threshold Voltage (VGS(th)) — -2 V to -4 V
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25C — 110 W
Single-Pulse Avalanche Energy (EAS) — 270 mJ
Lead-Free Finish — Yes (PBF suffix)

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