IPD50P04P4L11ATMA2 vs IRFR5305TRPBF Perbandingan
Perbandingan bersamaan detil IPD50P04P4L11ATMA2 dari Infineon dan IRFR5305TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD50P04P4L11ATMA2 | IRFR5305TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | P-Channel MOSFET, enhancement mode | — |
| Drain-Source Voltage VDS | -40 V | — |
| Continuous Drain Current ID (TC = 25 °C) | -50 A | — |
| On-State Resistance RDS(on) (VGS = -10 V) | 10.6 mΩ typical | — |
| Gate-Source Voltage VGS (max) | ±20 V | — |
| Gate Threshold Voltage VGS(th) | -1.0 V to -2.5 V typical | — |
| Typical Gate Charge Qg | 45 nC | — |
| Power Dissipation PD (TC = 25 °C) | 58 W | — |
| Suhu Hubung Kerja | -55 °C to +175 °C | — |
| Paket | PG-TO252-3-313 (DPAK), surface mount | TO-252AA (DPAK) |
| Jumlah Pin | 3 (Drain / Tab / Source / Gate) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant | — |
| Level MSL | [DATA_NEEDED: MSL rating] | 1 |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) Max | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | 31 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance (RDS(on)) Max at VGS=-10V | — | 65 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | -2 V to -4 V |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25C | — | 110 W |
| Single-Pulse Avalanche Energy (EAS) | — | 270 mJ |
| Rentang Suhu Kerja | — | -55 C to +175 C |
| Technology | — | HEXFET (IR MOSFET) |
| Status RoHS | — | Compliant (Pb-free PBF suffix) |
| Lead-Free Finish | — | Yes (PBF suffix) |