IPD50P04P4L11ATMA2 vs IRFR5305TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD50P04P4L11ATMA2 sa pamamagitan ng Infineon at IRFR5305TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD50P04P4L11ATMA2 IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon

IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon

IPD50P04P4L11ATMA2 ✓ Nakahanda
Infineon
IRFR5305TRPBF IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD50P04P4L11ATMA2 IRFR5305TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor P-Channel MOSFET, enhancement mode —
Drain-Source Voltage VDS -40 V —
Continuous Drain Current ID (TC = 25 °C) -50 A —
On-State Resistance RDS(on) (VGS = -10 V) 10.6 mΩ typical —
Gate-Source Voltage VGS (max) ±20 V —
Gate Threshold Voltage VGS(th) -1.0 V to -2.5 V typical —
Typical Gate Charge Qg 45 nC —
Power Dissipation PD (TC = 25 °C) 58 W —
Temperature ng Junction na Operasyon -55 °C to +175 °C —
Packhaging PG-TO252-3-313 (DPAK), surface mount TO-252AA (DPAK)
Bilang ng Pin 3 (Drain / Tab / Source / Gate) —
Uri ng Pagpapasok Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
RoHS Compliance Compliant —
Level ng MSL [DATA_NEEDED: MSL rating] 1
Polarity — P-Channel
Drain-Source Voltage (VDS) Max — -55 V
Continuous Drain Current (ID) at TC=25C — 31 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
On-Resistance (RDS(on)) Max at VGS=-10V — 65 mOhm
Gate-Source Threshold Voltage (VGS(th)) — -2 V to -4 V
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25C — 110 W
Single-Pulse Avalanche Energy (EAS) — 270 mJ
Hanay ng Temperature na Operasyon — -55 C to +175 C
Technology — HEXFET (IR MOSFET)
Tindminan RoHS — Compliant (Pb-free PBF suffix)
Lead-Free Finish — Yes (PBF suffix)

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