IPD50P04P4L11ATMA2 vs IRFR5305TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD50P04P4L11ATMA2 disebabkan oleh Infineon dan IRFR5305TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD50P04P4L11ATMA2 | IRFR5305TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | P-Channel MOSFET, enhancement mode | — |
| Drain-Source Voltage VDS | -40 V | — |
| Continuous Drain Current ID (TC = 25 °C) | -50 A | — |
| On-State Resistance RDS(on) (VGS = -10 V) | 10.6 mΩ typical | — |
| Gate-Source Voltage VGS (max) | ±20 V | — |
| Gate Threshold Voltage VGS(th) | -1.0 V to -2.5 V typical | — |
| Typical Gate Charge Qg | 45 nC | — |
| Power Dissipation PD (TC = 25 °C) | 58 W | — |
| Suhu Hubungan Operasi | -55 °C to +175 °C | — |
| Kemasan | PG-TO252-3-313 (DPAK), surface mount | TO-252AA (DPAK) |
| Kiraan Pin | 3 (Drain / Tab / Source / Gate) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) Max | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | 31 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance (RDS(on)) Max at VGS=-10V | — | 65 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | -2 V to -4 V |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25C | — | 110 W |
| Single-Pulse Avalanche Energy (EAS) | — | 270 mJ |
| Gambaran Suhu Operasi | — | -55 C to +175 C |
| Technology | — | HEXFET (IR MOSFET) |
| Status RoHS | — | Compliant (Pb-free PBF suffix) |
| Lead-Free Finish | — | Yes (PBF suffix) |