IPD60R145CFD7ATMA1 vs IPD80R1K4P7ATMA1 Perbandingan

Perbandingan bersamaan detil IPD60R145CFD7ATMA1 dari Infineon dan IPD80R1K4P7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon

IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon

IPD80R1K4P7ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD60R145CFD7ATMA1 IPD80R1K4P7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology CoolMOS CFD7 (superjunction) N-Channel Superjunction
Drain-Source Voltage (V<sub>DS</sub>) 600 V —
Continuous Drain Current (I<sub>D</sub>) 16 A (T<sub>C</sub> = 25C) —
On-Resistance R<sub>DS(on)</sub> max 145 mOhm —
Power Dissipation (P<sub>D</sub>) 83 W (T<sub>C</sub> = 25C) —
Gate Threshold Voltage V<sub>GS(th)</sub> [DATA_NEEDED: Vth typical/min/max] —
Paket TO-252AA (DPAK) surface mount PG-TO252-2 (DPAK)
Body Diode Integrated fast body diode (low Q<sub>rr</sub>) Integrated, fast recovery
Suhu Kerja -55C to +150C (junction) —
Tipe Mounting Surface Mount (DPAK, 3-pin + tab) Surface Mount
Jumlah Pin 3 (Gate, Drain, Source) 3 (Gate, Drain/Tab, Source)
Series CoolMOS CFD7 CoolMOS P7
Level MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Target Application ZVS / LLC resonant converters, soft switching —
Manufacturer — Infineon Technologies
Drain-Source Voltage (VDS) — 800 V
Continuous Drain Current (ID) at Tc=25C — 4 A
On-Resistance (RDS(on)) typ/max — 1.2 ohm typ / 1.4 ohm max
Gate Threshold Voltage (VGS(th)) — 3.5 V (typ)
Gate Charge (Qg) typ — [DATA_NEEDED: Qg value]
Dissipasi Listrik (Ptot) — 32 W
Suhu Hubung Kerja — -55C to +150C
REACH Status — Compliant
Avalanche Energy Rated — Yes

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon