IPD60R145CFD7ATMA1 vs IPD80R1K4P7ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R145CFD7ATMA1 disebabkan oleh Infineon dan IPD80R1K4P7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon

IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon

IPD80R1K4P7ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD60R145CFD7ATMA1 IPD80R1K4P7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology CoolMOS CFD7 (superjunction) N-Channel Superjunction
Drain-Source Voltage (V<sub>DS</sub>) 600 V —
Continuous Drain Current (I<sub>D</sub>) 16 A (T<sub>C</sub> = 25C) —
On-Resistance R<sub>DS(on)</sub> max 145 mOhm —
Power Dissipation (P<sub>D</sub>) 83 W (T<sub>C</sub> = 25C) —
Gate Threshold Voltage V<sub>GS(th)</sub> [DATA_NEEDED: Vth typical/min/max] —
Kemasan TO-252AA (DPAK) surface mount PG-TO252-2 (DPAK)
Body Diode Integrated fast body diode (low Q<sub>rr</sub>) Integrated, fast recovery
Suhu Operasi -55C to +150C (junction) —
Jenis Pemasangan Surface Mount (DPAK, 3-pin + tab) Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) 3 (Gate, Drain/Tab, Source)
Series CoolMOS CFD7 CoolMOS P7
Aras MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Target Application ZVS / LLC resonant converters, soft switching —
Manufacturer — Infineon Technologies
Drain-Source Voltage (VDS) — 800 V
Continuous Drain Current (ID) at Tc=25C — 4 A
On-Resistance (RDS(on)) typ/max — 1.2 ohm typ / 1.4 ohm max
Gate Threshold Voltage (VGS(th)) — 3.5 V (typ)
Gate Charge (Qg) typ — [DATA_NEEDED: Qg value]
Pembuangan Kuasa (Ptot) — 32 W
Suhu Hubungan Operasi — -55C to +150C
REACH Status — Compliant
Avalanche Energy Rated — Yes

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