IPD65R225C7ATMA1 vs IPD60R380C6ATMA1 Perbandingan

Perbandingan bersamaan detil IPD65R225C7ATMA1 dari Infineon dan IPD60R380C6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD65R225C7ATMA1 IPD60R380C6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series CoolMOS C7 —
Tipe Transistor N-Channel MOSFET —
Technology Super-junction (SJ) / CoolMOS CoolMOS C6 Superjunction
Drain-Source Voltage (VDSS) 650 V —
Continuous Drain Current (ID) at TC 11 A —
Power Dissipation (PD) at TC 63 W —
On-Resistance RDS(on) max 225 mΩ —
Gate-Source Voltage (VGS) ±20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th)] [DATA_NEEDED: gate threshold voltage]
Rentang Suhu Kerja -55°C to +150°C —
Paket PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (2 + tab) —
Level MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
Status RoHS Compliant Compliant
Avalanche Energy Rated Yes (per datasheet) —
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID) at TC=25C — 10.6 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V — 380 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: gate-source voltage max]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at TC=25C — 83 W
Operating Junction Temperature (TJ) — -55C to +150C
Storage Temperature — [DATA_NEEDED: storage temperature]
FET Type — N-Channel
Drain-Tab Connection — Exposed pad (electrically connected to drain)

Spek dan Sumber

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