IPD65R225C7ATMA1 vs IPD60R380C6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD65R225C7ATMA1 disebabkan oleh Infineon dan IPD60R380C6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD65R225C7ATMA1 IPD60R380C6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series CoolMOS C7 —
Jenis Transistor N-Channel MOSFET —
Technology Super-junction (SJ) / CoolMOS CoolMOS C6 Superjunction
Drain-Source Voltage (VDSS) 650 V —
Continuous Drain Current (ID) at TC 11 A —
Power Dissipation (PD) at TC 63 W —
On-Resistance RDS(on) max 225 mΩ —
Gate-Source Voltage (VGS) ±20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th)] [DATA_NEEDED: gate threshold voltage]
Gambaran Suhu Operasi -55°C to +150°C —
Kemasan PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Bilangan Pin 3 (2 + tab) —
Aras MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
Status RoHS Compliant Compliant
Avalanche Energy Rated Yes (per datasheet) —
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID) at TC=25C — 10.6 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V — 380 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: gate-source voltage max]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at TC=25C — 83 W
Operating Junction Temperature (TJ) — -55C to +150C
Storage Temperature — [DATA_NEEDED: storage temperature]
FET Type — N-Channel
Drain-Tab Connection — Exposed pad (electrically connected to drain)

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