IPD65R225C7ATMA1 vs IPD60R380C6ATMA1 Comparison

Detailed side-by-side comparison of IPD65R225C7ATMA1 by Infineon and IPD60R380C6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD65R225C7ATMA1 IPD60R380C6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Series CoolMOS C7 —
Transistor Type N-Channel MOSFET —
Technology Super-junction (SJ) / CoolMOS CoolMOS C6 Superjunction
Drain-Source Voltage (VDSS) 650 V —
Continuous Drain Current (ID) at TC 11 A —
Power Dissipation (PD) at TC 63 W —
On-Resistance RDS(on) max 225 mΩ —
Gate-Source Voltage (VGS) ±20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th)] [DATA_NEEDED: gate threshold voltage]
Operating Temperature Range -55°C to +150°C —
Package PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
Number of Pins 3 (2 + tab) —
MSL Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
RoHS Status Compliant Compliant
Avalanche Energy Rated Yes (per datasheet) —
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID) at TC=25C — 10.6 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V — 380 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: gate-source voltage max]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at TC=25C — 83 W
Operating Junction Temperature (TJ) — -55C to +150C
Storage Temperature — [DATA_NEEDED: storage temperature]
FET Type — N-Channel
Drain-Tab Connection — Exposed pad (electrically connected to drain)

Datasheets & Resources

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