IPD70N10S312ATMA2 vs BSC076N06NS3GATMA1 Perbandingan

Perbandingan bersamaan detil IPD70N10S312ATMA2 dari Infineon dan BSC076N06NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD70N10S312ATMA2 BSC076N06NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPD70N10S312ATMA2 —
Technology OptiMOS-T Power-MOSFET (N-Channel) N-Channel Trench MOSFET
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID, Tc) 70 A —
Power Dissipation (Ptot, Tc=25C) 125 W —
On-State Resistance RDS(on) [DATA_NEEDED: typical RDS(on) at VGS=10V] —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] 2.0 V to 3.5 V
Rentang Suhu Kerja -55C to +175C -55C to +150C
Paket PG-TO252-3-11 (DPAK) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Gate, Drain, Source) —
Channel Type N-Channel Enhancement Mode —
Status RoHS Compliant —
Level MSL 1 (unlimited floor life) 1 (unlimited)
Avalanche Rated Yes —
Product Family — OptiMOS 3
Continuous Drain Current (ID) at TC=25C — 50 A
On-Resistance RDS(on) max at VGS=10V — 7.6 mΩ
On-Resistance RDS(on) max at VGS=4.5V — 10.4 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 69 W
RoHS Compliance — Compliant
Bebas Halogen — Yes (per Infineon product page)

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