IPD70N10S312ATMA2 vs BSC076N06NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD70N10S312ATMA2 disebabkan oleh Infineon dan BSC076N06NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD70N10S312ATMA2 BSC076N06NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPD70N10S312ATMA2 —
Technology OptiMOS-T Power-MOSFET (N-Channel) N-Channel Trench MOSFET
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID, Tc) 70 A —
Power Dissipation (Ptot, Tc=25C) 125 W —
On-State Resistance RDS(on) [DATA_NEEDED: typical RDS(on) at VGS=10V] —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] 2.0 V to 3.5 V
Gambaran Suhu Operasi -55C to +175C -55C to +150C
Kemasan PG-TO252-3-11 (DPAK) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) —
Channel Type N-Channel Enhancement Mode —
Status RoHS Compliant —
Aras MSL 1 (unlimited floor life) 1 (unlimited)
Avalanche Rated Yes —
Product Family — OptiMOS 3
Continuous Drain Current (ID) at TC=25C — 50 A
On-Resistance RDS(on) max at VGS=10V — 7.6 mΩ
On-Resistance RDS(on) max at VGS=4.5V — 10.4 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 69 W
RoHS Compliance — Compliant
Boson Bebas — Yes (per Infineon product page)

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