IPD70N10S3L12ATMA2 vs IPD50N06S409ATMA2 Perbandingan
Perbandingan bersamaan detil IPD70N10S3L12ATMA2 dari Infineon dan IPD50N06S409ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD70N10S3L12ATMA2 | IPD50N06S409ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD70N10S3L12ATMA2 | — |
| Technology | OptiMOS-T (N-Channel Trench MOSFET) | N-Channel MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) at TC | 70 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | [DATA_NEEDED: VGS max rating] |
| On-State Resistance R_DS(on) typ @ VGS=10V | 11.5 mOhm | — |
| On-State Resistance R_DS(on) max @ VGS=10V | [DATA_NEEDED: R_DS(on) max] | — |
| Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation PD at TC | 125 W | — |
| Suhu Hubung Kerja | -55 C to +175 C | -55 °C to +175 °C |
| Paket | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL level] | — |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| Jumlah Pin | — | 3 (2 + Tab) |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |