IPD70N10S3L12ATMA2 vs ISC045N03L5SATMA1 Perbandingan

Perbandingan bersamaan detil IPD70N10S3L12ATMA2 dari Infineon dan ISC045N03L5SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD70N10S3L12ATMA2 ISC045N03L5SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPD70N10S3L12ATMA2 ISC045N03L5SATMA1
Technology OptiMOS-T (N-Channel Trench MOSFET) OptiMOS 5 / Trench
Drain-Source Voltage (VDS) 100 V 30 V
Continuous Drain Current (ID) at TC 70 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] ±20 V
On-State Resistance R_DS(on) typ @ VGS=10V 11.5 mOhm —
On-State Resistance R_DS(on) max @ VGS=10V [DATA_NEEDED: R_DS(on) max] —
Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissipation PD at TC 125 W —
Suhu Hubung Kerja -55 C to +175 C —
Paket PG-TO252-3-11 (DPAK) SuperSO8 5x6 (PG-TDSON-8-6)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL level] —
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at TA=25°C — 18 A
Continuous Drain Current (ID) at TC=25°C — 63 A
On-Resistance RDS(on) max @ VGS=10V — 4.5 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 2 V @ ID=250 µA
Total Gate Charge (Qg) — 13 nC @ VGS=10 V
Input Capacitance (Ciss) — 870 pF @ VDS=15 V
Power Dissipation (PD) at TA=25°C — 2.5 W
Power Dissipation (PD) at TC=25°C — 30 W
Rentang Suhu Kerja — -55 °C to +150 °C

Spek dan Sumber

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