IPD70N10S3L12ATMA2 vs ISC045N03L5SATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD70N10S3L12ATMA2 disebabkan oleh Infineon dan ISC045N03L5SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD70N10S3L12ATMA2 ISC045N03L5SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPD70N10S3L12ATMA2 ISC045N03L5SATMA1
Technology OptiMOS-T (N-Channel Trench MOSFET) OptiMOS 5 / Trench
Drain-Source Voltage (VDS) 100 V 30 V
Continuous Drain Current (ID) at TC 70 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] ±20 V
On-State Resistance R_DS(on) typ @ VGS=10V 11.5 mOhm —
On-State Resistance R_DS(on) max @ VGS=10V [DATA_NEEDED: R_DS(on) max] —
Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissipation PD at TC 125 W —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan PG-TO252-3-11 (DPAK) SuperSO8 5x6 (PG-TDSON-8-6)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL level] —
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at TA=25°C — 18 A
Continuous Drain Current (ID) at TC=25°C — 63 A
On-Resistance RDS(on) max @ VGS=10V — 4.5 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 2 V @ ID=250 µA
Total Gate Charge (Qg) — 13 nC @ VGS=10 V
Input Capacitance (Ciss) — 870 pF @ VDS=15 V
Power Dissipation (PD) at TA=25°C — 2.5 W
Power Dissipation (PD) at TC=25°C — 30 W
Gambaran Suhu Operasi — -55 °C to +150 °C

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