IPD70R1K4P7SAUMA1 vs IPD60R280P7SAUMA1 Perbandingan

Perbandingan bersamaan detil IPD70R1K4P7SAUMA1 dari Infineon dan IPD60R280P7SAUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD70R1K4P7SAUMA1 IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD70R1K4P7SAUMA1 IPD60R280P7SAUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family CoolMOS P7 (700V Superjunction) —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 700 V 600 V
Continuous Drain Current (ID) at Tc=25C 4 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V, ID 1.4 ohm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] 4 V max @ ID = 190 µA
Total Power Dissipation (Ptot) at Tc=25C 23 W —
Suhu Hubung Kerja -55C to +150C —
Paket PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Gate, Drain, Source) —
Technology Superjunction (CoolMOS P7) CoolMOS P7 Superjunction (SJ) N-channel
Avalanche Energy Rated Yes (100% avalanche tested) —
ESD Protection Integrated (per datasheet) —
Status RoHS Compliant Compliant
Continuous Drain Current (ID, Tc) — 12 A
Static Drain-Source On-Resistance (RDS(on)) — 280 mΩ (typical)
Gate-Source Voltage (VGS) Max — ±20 V
Total Power Dissipation (Ptot, Tc) — 53 W
Operating Junction Temperature (TJ) — -40 °C to +150 °C
Level MSL — 1
Series — CoolMOS P7 (7th generation, 600 V)
Integrated ESD Protection — Yes

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