IPD70R1K4P7SAUMA1 vs IPD60R280P7SAUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD70R1K4P7SAUMA1 disebabkan oleh Infineon dan IPD60R280P7SAUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD70R1K4P7SAUMA1 IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD70R1K4P7SAUMA1 IPD60R280P7SAUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family CoolMOS P7 (700V Superjunction) —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 700 V 600 V
Continuous Drain Current (ID) at Tc=25C 4 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V, ID 1.4 ohm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] 4 V max @ ID = 190 µA
Total Power Dissipation (Ptot) at Tc=25C 23 W —
Suhu Hubungan Operasi -55C to +150C —
Kemasan PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) —
Technology Superjunction (CoolMOS P7) CoolMOS P7 Superjunction (SJ) N-channel
Avalanche Energy Rated Yes (100% avalanche tested) —
ESD Protection Integrated (per datasheet) —
Status RoHS Compliant Compliant
Continuous Drain Current (ID, Tc) — 12 A
Static Drain-Source On-Resistance (RDS(on)) — 280 mΩ (typical)
Gate-Source Voltage (VGS) Max — ±20 V
Total Power Dissipation (Ptot, Tc) — 53 W
Operating Junction Temperature (TJ) — -40 °C to +150 °C
Aras MSL — 1
Series — CoolMOS P7 (7th generation, 600 V)
Integrated ESD Protection — Yes

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