IPD90P04P405ATMA2 vs BSZ018NE2LSATMA1 Perbandingan
Perbandingan bersamaan detil IPD90P04P405ATMA2 dari Infineon dan BSZ018NE2LSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD90P04P405ATMA2 | BSZ018NE2LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -40 V | 25 V |
| Continuous Drain Current (ID, Tc) | -90 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD, Tc) | 125 W | — |
| On-Resistance RDS(on) at VGS = -10 V | 4.7 mΩ (typical) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Rentang Suhu Kerja | -55 °C to +175 °C (Tj) | -55C to +150C |
| Paket | PG-TO252-3-313 (DPAK, surface mount) | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (Gate, Drain, Source) | — |
| Process Technology | OptiMOS-P2 (trench + field plate) | — |
| Level MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 25V |
| Technology | — | N-Channel Trench MOSFET |
| Continuous Drain Current (TA) | — | 23 A |
| Continuous Drain Current (TC) | — | 40 A |
| Power Dissipation (TA) | — | 2.1 W |
| Power Dissipation (TC) | — | 69 W |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) typical at VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge at VGS=10V] |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes |