IPD90P04P405ATMA2 vs BSZ018NE2LSATMA1 比較
詳細並排比較 IPD90P04P405ATMA2 由 Infineon 與 BSZ018NE2LSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD90P04P405ATMA2 | BSZ018NE2LSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -40 V | 25 V |
| Continuous Drain Current (ID, Tc) | -90 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD, Tc) | 125 W | — |
| On-Resistance RDS(on) at VGS = -10 V | 4.7 mΩ (typical) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| 工作溫度範圍 | -55 °C to +175 °C (Tj) | -55C to +150C |
| 封裝 | PG-TO252-3-313 (DPAK, surface mount) | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 (Gate, Drain, Source) | — |
| Process Technology | OptiMOS-P2 (trench + field plate) | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS 狀態 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 25V |
| Technology | — | N-Channel Trench MOSFET |
| Continuous Drain Current (TA) | — | 23 A |
| Continuous Drain Current (TC) | — | 40 A |
| Power Dissipation (TA) | — | 2.1 W |
| Power Dissipation (TC) | — | 69 W |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) typical at VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge at VGS=10V] |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes |