IPG20N04S4L08ATMA1 vs IPG20N06S4L14AATMA1 Perbandingan

Perbandingan bersamaan detil IPG20N04S4L08ATMA1 dari Infineon dan IPG20N06S4L14AATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPG20N06S4L14AATMA1 IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPG20N04S4L08ATMA1 IPG20N06S4L14AATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPG20N04S4L08ATMA1 IPG20N06S4L14AATMA1
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate —
Drain-to-Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ 25°C 20 A —
On-Resistance Rds(on) max @ Vgs=10V, Id=17A 8.2 mΩ —
Power Dissipation (Pd) 54 W —
Suhu Kerja -55°C to +175°C —
Paket / Case PG-TDSON-8-4 (TDSON-8) —
Tipe Mounting Surface Mount Surface Mount
Series OptiMOS™-T2, Automotive, AEC-Q101 —
Level MSL MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) —
Avalanche Tested 100% Avalanche Tested 100% (per datasheet)
RoHS / Green RoHS Compliant, Green Product —
Part Status Active —
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) — 20 A (per channel)
Power Dissipation (PD) — 50 W
RDS(on) at VGS=10V — 13.7 mΩ typical
RDS(on) at VGS=4.5V — 14 mΩ typical
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th)]
Logic-Level Gate Drive — Yes
Rentang Suhu Kerja — -55°C to +175°C (junction)
Paket — PG-TDSON-8-10 (Wettable Flank)
Automotive Qualification — AEC-Q101
Peak Reflow Temperature — 260°C
RoHS Compliance — Green Product (RoHS compliant)
AOI Compatible — Yes (Wettable Flank)
Technology — OptiMOS™ Trench

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon