IPG20N04S4L08ATMA1 vs IPG20N06S4L14AATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N04S4L08ATMA1 disebabkan oleh Infineon dan IPG20N06S4L14AATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPG20N06S4L14AATMA1 IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPG20N04S4L08ATMA1 IPG20N06S4L14AATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPG20N04S4L08ATMA1 IPG20N06S4L14AATMA1
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate —
Drain-to-Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ 25°C 20 A —
On-Resistance Rds(on) max @ Vgs=10V, Id=17A 8.2 mΩ —
Power Dissipation (Pd) 54 W —
Suhu Operasi -55°C to +175°C —
Kemasan / Case PG-TDSON-8-4 (TDSON-8) —
Jenis Pemasangan Surface Mount Surface Mount
Series OptiMOS™-T2, Automotive, AEC-Q101 —
Aras MSL MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) —
Avalanche Tested 100% Avalanche Tested 100% (per datasheet)
RoHS / Green RoHS Compliant, Green Product —
Part Status Active —
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) — 20 A (per channel)
Power Dissipation (PD) — 50 W
RDS(on) at VGS=10V — 13.7 mΩ typical
RDS(on) at VGS=4.5V — 14 mΩ typical
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th)]
Logic-Level Gate Drive — Yes
Gambaran Suhu Operasi — -55°C to +175°C (junction)
Kemasan — PG-TDSON-8-10 (Wettable Flank)
Automotive Qualification — AEC-Q101
Peak Reflow Temperature — 260°C
RoHS Compliance — Green Product (RoHS compliant)
AOI Compatible — Yes (Wettable Flank)
Technology — OptiMOS™ Trench

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