IPG20N06S2L65AATMA1 vs IPG20N04S408ATMA1 Perbandingan
Perbandingan bersamaan detil IPG20N06S2L65AATMA1 dari Infineon dan IPG20N04S408ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPG20N06S2L65AATMA1 | IPG20N04S408ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS | — |
| FET Type | Dual N-Channel (Half Bridge / Independent) | Dual N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 20 A (per channel) | — |
| Power Dissipation (PD) | 43 W | — |
| Gate Threshold (VGS(th)) | Logic-Level | — |
| Technology | OptiMOS Trench MOSFET | OptiMOS (trench MOSFET) |
| Paket | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) | PG-TDSON-8-4 (SuperSO8 dual) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55 C to +175 C | — |
| AEC-Q101 Qualification | Yes | — |
| Level MSL | MSL1 (peak reflow 260 C) | MSL1 (260 degC peak reflow) |
| Status RoHS | Compliant (Green Product) | Compliant (Green Product) |
| Avalanche Tested | 100% (per datasheet) | — |
| AOI Compatible | Yes (wettable flank) | — |
| Drain-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, per channel) | — | 20 A at 25 degC case |
| R_DS(on) max @ V_GS=10V | — | 7.6 mOhm |
| Maximum Power Dissipation (P_D) | — | 65 W |
| Suhu Hubung Kerja | — | -55 degC to +175 degC |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Rated | — | 100 percent tested |
| Channel Count | — | 2 (independent) |
| Operating Mode | — | Enhancement mode, Normal Level |