IPG20N06S2L65AATMA1 vs IPG20N04S408ATMA1 比較
詳細並排比較 IPG20N06S2L65AATMA1 由 Infineon 與 IPG20N04S408ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPG20N06S2L65AATMA1 | IPG20N04S408ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS | — |
| FET Type | Dual N-Channel (Half Bridge / Independent) | Dual N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 20 A (per channel) | — |
| Power Dissipation (PD) | 43 W | — |
| Gate Threshold (VGS(th)) | Logic-Level | — |
| Technology | OptiMOS Trench MOSFET | OptiMOS (trench MOSFET) |
| 封裝 | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) | PG-TDSON-8-4 (SuperSO8 dual) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55 C to +175 C | — |
| AEC-Q101 Qualification | Yes | — |
| MSL 等級 | MSL1 (peak reflow 260 C) | MSL1 (260 degC peak reflow) |
| RoHS 狀態 | Compliant (Green Product) | Compliant (Green Product) |
| Avalanche Tested | 100% (per datasheet) | — |
| AOI Compatible | Yes (wettable flank) | — |
| Drain-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, per channel) | — | 20 A at 25 degC case |
| R_DS(on) max @ V_GS=10V | — | 7.6 mOhm |
| Maximum Power Dissipation (P_D) | — | 65 W |
| 工作接面溫度 | — | -55 degC to +175 degC |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Rated | — | 100 percent tested |
| Channel Count | — | 2 (independent) |
| Operating Mode | — | Enhancement mode, Normal Level |