IPG20N10S436AATMA1 vs IPD031N06L3GATMA1 Perbandingan
Perbandingan bersamaan detil IPG20N10S436AATMA1 dari Infineon dan IPD031N06L3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD031N06L3GATMA1 - 60V 100A 3.1mΩ N-Ch OptiMOS 3 MOSFET | Infineon
IPD031N06L3GATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPG20N10S436AATMA1 | IPD031N06L3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Configuration | Dual N-Channel (2 Elements with Built-in Diode) | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 20 A (per channel) | — |
| Total Power Dissipation (PD) | 43 W | — |
| Operating Mode | Enhancement Mode | — |
| Paket | PG-TDSON-8-10 (Wettable Flank) | PG-TO252-3 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Operating Temperature (TJ max) | +175 C | — |
| JESD-609 Code | e3 | — |
| Level MSL | MSL1 (260 C peak reflow) | 1 (Unlimited) |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100% | — |
| AOI Compatible | Yes (Wettable Flank) | — |
| Status RoHS | Compliant (Green Product) | Compliant |
| Channel Type | N-Channel Normal Level | — |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25°C | — | 100 A |
| Pulsed Drain Current (IDM) | — | 400 A |
| Maximum Power Dissipation (PD) at TC=25°C | — | 167 W |
| RDS(on) Max at VGS=10V | — | 3.1 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.2 V |
| Gate Drive Voltage (Max RDS(on)) | — | 4.5 V, 10 V |
| Total Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg typical value] |
| Rentang Suhu Kerja | — | -55°C to +175°C |
| Series | — | OptiMOS 3 |