IPG20N10S436AATMA1 vs IPD031N06L3GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPG20N10S436AATMA1 sa pamamagitan ng Infineon at IPD031N06L3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPG20N10S436AATMA1 IPG20N10S436AATMA1 - Dual N-CH 100V 20A MOSFET Array | Infineon

IPG20N10S436AATMA1 - Dual N-CH 100V 20A MOSFET Array | Infineon

IPG20N10S436AATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPG20N10S436AATMA1 IPD031N06L3GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Configuration Dual N-Channel (2 Elements with Built-in Diode) —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 20 A (per channel) —
Total Power Dissipation (PD) 43 W —
Operating Mode Enhancement Mode —
Packhaging PG-TDSON-8-10 (Wettable Flank) PG-TO252-3 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Operating Temperature (TJ max) +175 C —
JESD-609 Code e3 —
Level ng MSL MSL1 (260 C peak reflow) 1 (Unlimited)
Automotive Qualification AEC-Q101 —
Avalanche Tested 100% —
AOI Compatible Yes (Wettable Flank) —
Tindminan RoHS Compliant (Green Product) Compliant
Channel Type N-Channel Normal Level —
FET Type — N-Channel
Technology — MOSFET (Metal Oxide)
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=25°C — 100 A
Pulsed Drain Current (IDM) — 400 A
Maximum Power Dissipation (PD) at TC=25°C — 167 W
RDS(on) Max at VGS=10V — 3.1 mΩ
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.2 V
Gate Drive Voltage (Max RDS(on)) — 4.5 V, 10 V
Total Gate Charge (Qg) Typ — [DATA_NEEDED: Qg typical value]
Hanay ng Temperature na Operasyon — -55°C to +175°C
Series — OptiMOS 3

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