IPG20N10S436AATMA1 vs IPD031N06L3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N10S436AATMA1 disebabkan oleh Infineon dan IPD031N06L3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPD031N06L3GATMA1 - 60V 100A 3.1mΩ N-Ch OptiMOS 3 MOSFET | Infineon
IPD031N06L3GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPG20N10S436AATMA1 | IPD031N06L3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Configuration | Dual N-Channel (2 Elements with Built-in Diode) | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 20 A (per channel) | — |
| Total Power Dissipation (PD) | 43 W | — |
| Operating Mode | Enhancement Mode | — |
| Kemasan | PG-TDSON-8-10 (Wettable Flank) | PG-TO252-3 (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Operating Temperature (TJ max) | +175 C | — |
| JESD-609 Code | e3 | — |
| Aras MSL | MSL1 (260 C peak reflow) | 1 (Unlimited) |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100% | — |
| AOI Compatible | Yes (Wettable Flank) | — |
| Status RoHS | Compliant (Green Product) | Compliant |
| Channel Type | N-Channel Normal Level | — |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25°C | — | 100 A |
| Pulsed Drain Current (IDM) | — | 400 A |
| Maximum Power Dissipation (PD) at TC=25°C | — | 167 W |
| RDS(on) Max at VGS=10V | — | 3.1 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.2 V |
| Gate Drive Voltage (Max RDS(on)) | — | 4.5 V, 10 V |
| Total Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg typical value] |
| Gambaran Suhu Operasi | — | -55°C to +175°C |
| Series | — | OptiMOS 3 |