IPL60R115CFD7AUMA1 vs IPL60R105P7AUMA1 Perbandingan

Perbandingan bersamaan detil IPL60R115CFD7AUMA1 dari Infineon dan IPL60R105P7AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPL60R115CFD7AUMA1 IPL60R115CFD7AUMA1 - 600V 22A CoolMOS CFD7 MOSFET | Infineon

IPL60R115CFD7AUMA1 - 600V 22A CoolMOS CFD7 MOSFET | Infineon

IPL60R115CFD7AUMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPL60R115CFD7AUMA1 IPL60R105P7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPL60R115CFD7AUMA1 —
Series CoolMOS CFD7 CoolMOS P7
FET Type N-Channel —
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc) 22 A —
On-Resistance (RDS(on)) 115 mOhm (typ, VGS=10V) —
Paket / Case PG-VSON-4 (5x6 mm) with exposed pad —
Tipe Mounting Surface Mount Surface Mount
Technology Superjunction MOSFET (CoolMOS CFD7) Superjunction (SJ) N-Channel Power MOSFET
Integrated Body Diode Yes - fast body diode (CFD) —
Application Resonant high-power topologies (LLC, PFC) —
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] -55C to +150C
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Status RoHS Compliant (per distributor listings) Compliant
Jumlah Pin 4 —
Quantity per Reel [DATA_NEEDED: reel qty] —
On-Resistance (RDS(on)) max — 105 mΩ
Continuous Drain Current (ID) at Tc — 33 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (Ptot) at Tc — 137 W
Gate Threshold Voltage (VGS(th)) typ — 3.5 V
Gate Charge (Qg) typ — 45 nC
Paket — PG-VSON-4 (4-pin SMD with exposed pad)
Channel Type — N-Channel
Level MSL — [DATA_NEEDED: MSL rating]
Bebas Halogen — Yes
Lead-Free — Yes

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