IPL60R115CFD7AUMA1 vs IPL60R105P7AUMA1 比較
詳細並排比較 IPL60R115CFD7AUMA1 由 Infineon 與 IPL60R105P7AUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ 啟用中規格比較
| 參數 | IPL60R115CFD7AUMA1 | IPL60R105P7AUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPL60R115CFD7AUMA1 | — |
| Series | CoolMOS CFD7 | CoolMOS P7 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc) | 22 A | — |
| On-Resistance (RDS(on)) | 115 mOhm (typ, VGS=10V) | — |
| 封裝 / 外殼 | PG-VSON-4 (5x6 mm) with exposed pad | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | Superjunction MOSFET (CoolMOS CFD7) | Superjunction (SJ) N-Channel Power MOSFET |
| Integrated Body Diode | Yes - fast body diode (CFD) | — |
| Application | Resonant high-power topologies (LLC, PFC) | — |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | -55C to +150C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| RoHS 狀態 | Compliant (per distributor listings) | Compliant |
| 腳位數 | 4 | — |
| Quantity per Reel | [DATA_NEEDED: reel qty] | — |
| On-Resistance (RDS(on)) max | — | 105 mΩ |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot) at Tc | — | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.5 V |
| Gate Charge (Qg) typ | — | 45 nC |
| 封裝 | — | PG-VSON-4 (4-pin SMD with exposed pad) |
| Channel Type | — | N-Channel |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |
| 無鹵素 | — | Yes |
| Lead-Free | — | Yes |