IPL60R180P6AUMA1 vs IPB60R280P7ATMA1 Perbandingan
Perbandingan bersamaan detil IPL60R180P6AUMA1 dari Infineon dan IPB60R280P7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPL60R180P6AUMA1 | IPB60R280P7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | CoolMOS P6 (Superjunction N-channel MOSFET) | Superjunction (SJ) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Gate-Source Voltage (VGS) | -20 V to +20 V (max) | — |
| Continuous Drain Current (ID) at Tc=25°C | 22.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V | 180 mΩ | — |
| Power Dissipation (Ptot) at Tc=25°C | 176 W | — |
| Rentang Suhu Hubung Kerja | -55 °C to +150 °C | — |
| Storage Temperature Range | -55 °C to +150 °C | — |
| Thermal Resistance Junction-to-Case (RθJC) | [DATA_NEEDED: RθJC value] | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V (typical 3.0 V) | — |
| Paket | PG-VSON-4 (Thin-PAK) surface mount | PG-TO263-3 (D2PAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL 1 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS P7 (600 V) |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | — | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | — | 3.5 V |
| Power Dissipation P_D (T_C=25°C) | — | 53 W |
| Jumlah Pin | — | 3 (2 + Tab) |
| Rentang Suhu Kerja | — | -55 °C to +150 °C (T_j max) |
| Configuration | — | Single N-Channel |
| Generation | — | 7th Gen CoolMOS (successor to P6) |