IPN60R360P7SATMA1 vs BSC019N04LSTATMA1 Perbandingan

Perbandingan bersamaan detil IPN60R360P7SATMA1 dari Infineon dan BSC019N04LSTATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPN60R360P7SATMA1 BSC019N04LSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series CoolMOS P7 —
Technology Superjunction (SJ) N-Channel MOSFET OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) 600 V 40 V
On-Resistance RDS(on) max 360 mΩ —
Continuous Drain Current (ID) at TC=25°C 9 A —
Continuous Drain Current (ID) at TA=25°C [DATA_NEEDED: ID at TA=25°C with standard PCB] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed ID limit]
Power Dissipation (PD) at TC=25°C 7 W —
Gate-Source Voltage (VGS) ±20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge (QG) [DATA_NEEDED: QG typical at VGS=10V] —
Rentang Suhu Kerja -55°C to +150°C (TJ) -55 C to +150 C
Paket PG-SOT223 (Surface Mount) TDSON-8 (SuperSO8) 5x6 mm
Tipe Mounting Surface Mount Surface Mount
ESD Protection Yes (integrated cell) —
Bebas Halogen Yes (per Infineon datasheet) —
RoHS Compliance Compliant —
Jumlah Pin 3 functional + tab (PG-SOT223) —
Body Diode Integrated, fast-recovery —
Continuous Drain Current (ID, Tc=25C) — 161 A
Continuous Drain Current (ID, Ta=25C) — 28 A
On-Resistance RDS(on) max @ VGS=10V — 1.9 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ — 1.7 V
Total Gate Charge Qg typ — 85 nC
Power Dissipation PD (Tc=25C) — 94 W
Level MSL — 1 (unlimited)
Status RoHS — Compliant
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — Yes

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