IPN60R360P7SATMA1 vs BSC019N04LSTATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPN60R360P7SATMA1 disebabkan oleh Infineon dan BSC019N04LSTATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPN60R360P7SATMA1 BSC019N04LSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series CoolMOS P7 —
Technology Superjunction (SJ) N-Channel MOSFET OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) 600 V 40 V
On-Resistance RDS(on) max 360 mΩ —
Continuous Drain Current (ID) at TC=25°C 9 A —
Continuous Drain Current (ID) at TA=25°C [DATA_NEEDED: ID at TA=25°C with standard PCB] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed ID limit]
Power Dissipation (PD) at TC=25°C 7 W —
Gate-Source Voltage (VGS) ±20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge (QG) [DATA_NEEDED: QG typical at VGS=10V] —
Gambaran Suhu Operasi -55°C to +150°C (TJ) -55 C to +150 C
Kemasan PG-SOT223 (Surface Mount) TDSON-8 (SuperSO8) 5x6 mm
Jenis Pemasangan Surface Mount Surface Mount
ESD Protection Yes (integrated cell) —
Boson Bebas Yes (per Infineon datasheet) —
RoHS Compliance Compliant —
Kiraan Pin 3 functional + tab (PG-SOT223) —
Body Diode Integrated, fast-recovery —
Continuous Drain Current (ID, Tc=25C) — 161 A
Continuous Drain Current (ID, Ta=25C) — 28 A
On-Resistance RDS(on) max @ VGS=10V — 1.9 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ — 1.7 V
Total Gate Charge Qg typ — 85 nC
Power Dissipation PD (Tc=25C) — 94 W
Aras MSL — 1 (unlimited)
Status RoHS — Compliant
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — Yes

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